Granted Patent
Utility
US 6,118,305 · App. 08/927,811
Semiconductor integrated circuit capable of preventing breakdown of a gate oxide film
Inventor:
Kumi Egawa
Patented Case
View Patent ↗
Granted: Sep 12, 2000
Filed: Sep 12, 1997
Inventor
Kumi Egawa
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.