IP Library › Granted Patent US 6,124,614
Granted Patent Utility
US 6,124,614 · App. 09/233,329

Si/SiGe MOSFET and method for fabricating the same

Inventors: Byung-Ryul Ryum, Soo Min Lee, Deok-Ho Cho, Tae-Hyeon Han
Patented Case View Patent ↗
Granted: Sep 26, 2000 Filed: Jan 20, 1999
Inventors
Byung-Ryul Ryum
Soo Min Lee
Deok-Ho Cho
Tae-Hyeon Han
Assignee (at issue)
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

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Quick Facts
Patent No.
US 6,124,614
App. No.
09/233,329
Filed
1999-01-20
Granted
2000-09-26
Kind
A