Granted Patent
Utility
US 6,127,267 · App. 09/168,670
Fabrication method of semiconductor device equipped with silicide layer
Inventors:
Yoshihisa Matsubara, Takashi Ishigami, Yoshiaki Yamada, Shinichi Watanuki
Patented Case
View Patent ↗
Granted: Oct 3, 2000
Filed: Oct 9, 1998
Inventors
Yoshihisa Matsubara
Takashi Ishigami
Yoshiaki Yamada
Shinichi Watanuki
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.