Granted Patent
Utility
US 6,137,139 · App. 09/324,553
Low voltage dual-well MOS device having high ruggedness, low on-resistance, and improved body diode reverse recovery
Inventors:
Jun Zeng, Carl F. Wheatley, Jr.
Patented Case
View Patent ↗
Granted: Oct 24, 2000
Filed: Jun 3, 1999
Inventors
Jun Zeng
Carl F. Wheatley, Jr.
Assignee (at issue)
Intersil Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.