Granted Patent
Utility
US 6,137,142 · App. 09/028,472
MOS device structure and method for reducing PN junction leakage
Inventor:
James B. Burr
Patented Case
View Patent ↗
Granted: Oct 24, 2000
Filed: Feb 24, 1998
Inventor
James B. Burr
Assignee (at issue)
Sun Microsystems Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.