Granted Patent
Utility
US 6,140,678 · App. 08/962,867
Trench-gated power MOSFET with protective diode
Inventors:
Wayne B. Grabowski, Richard K. Williams, Mohamed N. Darwish
Patented Case
View Patent ↗
Granted: Oct 31, 2000
Filed: Nov 3, 1997
Inventors
Wayne B. Grabowski
Richard K. Williams
Mohamed N. Darwish
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.