IP Library › Granted Patent US 6,140,684
Granted Patent Utility
US 6,140,684 · App. 08/881,342

SRAM cell structure with dielectric sidewall spacers and drain and channel regions defined along sidewall spacers

Inventors: Tsiu C. Chan, Frank R. Bryant
Patented Case View Patent ↗
Granted: Oct 31, 2000 Filed: Jun 24, 1997
Inventors
Tsiu C. Chan
Frank R. Bryant
Assignee (at issue)
STMICROELECTRONICS, INC.

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Quick Facts
Patent No.
US 6,140,684
App. No.
08/881,342
Filed
1997-06-24
Granted
2000-10-31
Kind
A