Granted Patent
Utility
US 6,150,674 · App. 09/434,005
Semiconductor device having Al.sub.x Ga.sub.1-x N (0<x<1) substrate
Inventors:
Masaaki Yuri, Osamu Imafuji, Shinji Nakamura, Kenji Orita
Patented Case
View Patent ↗
Granted: Nov 21, 2000
Filed: Nov 4, 1999
Inventors
Masaaki Yuri
Osamu Imafuji
Shinji Nakamura
Kenji Orita
Assignee (at issue)
Matsushita Electronics Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.