IP Library › Granted Patent US 6,157,566
Granted Patent Utility
US 6,157,566 · App. 09/550,189

Reduced leakage DRAM storage unit

Inventors: Zhiqiang Wu, Randhir P. S. Thakur, Alan R. Reinberg, Kirk D. Prall
Patented Case View Patent ↗
Granted: Dec 5, 2000 Filed: Apr 14, 2000
Inventors
Zhiqiang Wu
Randhir P. S. Thakur
Alan R. Reinberg
Kirk D. Prall
Assignee (at issue)
Micron Technology, Inc.

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Quick Facts
Patent No.
US 6,157,566
App. No.
09/550,189
Filed
2000-04-14
Granted
2000-12-05
Kind
A