Granted Patent
Utility
US 6,171,915 · App. 08/661,574
Method of fabricating a MOS-type transistor
Inventor:
Kuniyuki Hishinuma
Patented Case
View Patent ↗
Granted: Jan 9, 2001
Filed: Jun 11, 1996
Inventor
Kuniyuki Hishinuma
Assignee (at issue)
Nippon Precision Circuits Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.