Granted Patent
Utility
US 6,188,105 · App. 09/283,531
High density MOS-gated power device and process for forming same
Inventors:
Christopher Boguslaw Kocon, Jun Zeng
Patented Case
View Patent ↗
Granted: Feb 13, 2001
Filed: Apr 1, 1999
Inventors
Christopher Boguslaw Kocon
Jun Zeng
Assignee (at issue)
Intersil Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.