IP Library › Granted Patent US 6,191,484
Granted Patent Utility
US 6,191,484 · App. 08/508,973

Method of forming planarized multilevel metallization in an integrated circuit

Inventors: Kuei-Wu Huang, Tsiu C. Chan, Jamin Ling
Patented Case View Patent ↗
Granted: Feb 20, 2001 Filed: Jul 28, 1995
Inventors
Kuei-Wu Huang
Tsiu C. Chan
Jamin Ling
Assignee (at issue)
STMICROELECTRONICS, INC.

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Quick Facts
Patent No.
US 6,191,484
App. No.
08/508,973
Filed
1995-07-28
Granted
2001-02-20
Kind
A