Granted Patent
Utility
US 6,194,257 · App. 09/187,003
Fabrication method of gate electrode having dual gate insulating film
Inventor:
Jae-Soon Kwon
Patented Case
View Patent ↗
Granted: Feb 27, 2001
Filed: Nov 6, 1998
Inventor
Jae-Soon Kwon
Assignee (at issue)
LG Semicon Co., Ltd.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.