IP Library › Granted Patent US 6,194,753
Granted Patent Utility
US 6,194,753 · App. 09/233,420

Method of forming a perovskite structure semiconductor capacitor

Inventors: Jeong-Min Seon, Hwan-Myeong Kim
Patented Case View Patent ↗
Granted: Feb 27, 2001 Filed: Jan 20, 1999
Inventors
Jeong-Min Seon
Hwan-Myeong Kim
Assignee (at issue)
Hyundai Electronics Industries Co. Ltd.

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Quick Facts
Patent No.
US 6,194,753
App. No.
09/233,420
Filed
1999-01-20
Granted
2001-02-27
Kind
A