IP Library › Granted Patent US 6,194,760
Granted Patent Utility
US 6,194,760 · App. 09/215,372

Double-diffused MOS transistor and method of fabricating the same

Inventor: Sun-Hak Lee
Patented Case View Patent ↗
Granted: Feb 27, 2001 Filed: Dec 18, 1998
Inventor
Sun-Hak Lee
Assignee (at issue)
SAMSUNG DISPLAY CO., LTD.

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Quick Facts
Patent No.
US 6,194,760
App. No.
09/215,372
Filed
1998-12-18
Granted
2001-02-27
Kind
A