Granted Patent
Utility
US 6,198,127 · App. 09/314,323
MOS-gated power device having extended trench and doping zone and process for forming same
Inventor:
Christopher Boguslaw Kocon
Patented Case
View Patent ↗
Granted: Mar 6, 2001
Filed: May 19, 1999
Inventor
Christopher Boguslaw Kocon
Assignee (at issue)
Intersil Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.