IP Library Granted Patent US 6,251,797
Granted Patent Utility
US 6,251,797 · App. 09/515,670

Method of fabricating semiconductor device

Inventor: Isamu Nishimura
Patented Case View Patent ↗
Granted: Jun 26, 2001 Filed: Feb 29, 2000
Inventor
Isamu Nishimura
Assignee (at issue)
ROHM CO., LTD.

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Quick Facts
Patent No.
US 6,251,797
App. No.
09/515,670
Filed
2000-02-29
Granted
2001-06-26
Kind
A