Granted Patent
Utility
US 6,274,421 · App. 09/004,991
Method of making metal gate sub-micron MOS transistor
Inventors:
Sheng Teng Hsu, David R. Evans, Tue Nguyen
Patented Case
View Patent ↗
Granted: Aug 14, 2001
Filed: Jan 9, 1998
Inventors
Sheng Teng Hsu
David R. Evans
Tue Nguyen
Assignees (at issue)
Sharp Laboratories of America, Inc.
SHARP KABUSHIKI KAISHA
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.