IP Library › Granted Patent US 6,275,415
Granted Patent Utility
US 6,275,415 · App. 09/416,563

Multiple byte channel hot electron programming using ramped gate and source bias voltage

Inventors: Sameer Haddad, Ravi Sunkavalli, Wing Leung, John Chen, Ravi Prakash Gutala, Colin S. Bill, Vei-Han Chan
Patented Case View Patent ↗
Granted: Aug 14, 2001 Filed: Oct 12, 1999
Inventors
Sameer Haddad
Ravi Sunkavalli
Wing Leung
John Chen
Ravi Prakash Gutala
Colin S. Bill
Vei-Han Chan
Assignee (at issue)
Advanced Micro Devices, Inc.

This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.

Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 6,275,415
App. No.
09/416,563
Filed
1999-10-12
Granted
2001-08-14
Kind
A