Granted Patent
Utility
US 6,277,695 · App. 09/293,380
Method of forming vertical planar DMOSFET with self-aligned contact
Inventors:
Richard K. Williams, Sung-Shan Tai, Dorman C. Pitzer, Wayne B. Grabowski, Anthony C. Tsui, Mike F. Chang
Patented Case
View Patent ↗
Granted: Aug 21, 2001
Filed: Apr 16, 1999
Inventors
Richard K. Williams
Sung-Shan Tai
Dorman C. Pitzer
Wayne B. Grabowski
Anthony C. Tsui
Mike F. Chang
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.