IP Library › Granted Patent US 6,303,424
Granted Patent Utility
US 6,303,424 · App. 09/422,577

Method for fabricating a buried bit line in a DRAM cell

Inventors: Robin Lee, Anchor Chen
Patented Case View Patent ↗
Granted: Oct 16, 2001 Filed: Oct 21, 1999
Inventors
Robin Lee
Anchor Chen
Assignee (at issue)
WINBOND ELECTRONICS CORP.

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Quick Facts
Patent No.
US 6,303,424
App. No.
09/422,577
Filed
1999-10-21
Granted
2001-10-16
Kind
A