IP Library › Granted Patent US 6,303,425
Granted Patent Utility
US 6,303,425 · App. 09/660,448

Semiconductor device and method of manufacturing the same

Inventors: Shigenobu Maeda, Yasuo Inoue, Hirotada Kuriyama, Shigeto Maegawa, Kyozo Kanamoto, Toshiaki Iwamatsu
Patented Case View Patent ↗
Granted: Oct 16, 2001 Filed: Sep 12, 2000
Inventors
Shigenobu Maeda
Yasuo Inoue
Hirotada Kuriyama
Shigeto Maegawa
Kyozo Kanamoto
Toshiaki Iwamatsu
Assignee (at issue)
MITSUBISHI ELECTRIC CORPORATION

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Quick Facts
Patent No.
US 6,303,425
App. No.
09/660,448
Filed
2000-09-12
Granted
2001-10-16
Kind
A