Granted Patent
Utility
US 6,303,479 · App. 09/465,357
Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts
Inventor:
John P. Snyder
Patented Case
View Patent ↗
Granted: Oct 16, 2001
Filed: Dec 16, 1999
Inventor
John P. Snyder
Assignee (at issue)
SPINNAKER SEMICONDUCTOR, INC.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.