Granted Patent
Utility
US 6,309,515 · App. 09/181,649
Sputtering apparatus for sputtering high melting point metal and method for manufacturing semiconductor device having high melting point metal
Inventors:
Ken Inoue, Hitoshi Abiko, Minoru Higuchi
Patented Case
View Patent ↗
Granted: Oct 30, 2001
Filed: Oct 29, 1998
Inventors
Ken Inoue
Hitoshi Abiko
Minoru Higuchi
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.