IP Library › Granted Patent US 6,326,232
Granted Patent Utility
US 6,326,232 · App. 09/441,885

Method of fabricating semiconductor device

Inventors: Takayuki Tani, Haruo Hyoudo, Takao Shibuya
Patented Case View Patent ↗
Granted: Dec 4, 2001 Filed: Nov 17, 1999
Inventors
Takayuki Tani
Haruo Hyoudo
Takao Shibuya
Assignee (at issue)
SANYO ELECTRIC CO., LTD.

This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.

Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 6,326,232
App. No.
09/441,885
Filed
1999-11-17
Granted
2001-12-04
Kind
A