IP Library › Granted Patent US 6,335,278
Granted Patent Utility
US 6,335,278 · App. 09/455,909

Method of hydrogen anneal to a semiconductor substrate

Inventor: Shuji Miyazaki
Patented Case View Patent ↗
Granted: Jan 1, 2002 Filed: Dec 7, 1999
Inventor
Shuji Miyazaki
Assignee (at issue)
NEC CORPORATION

This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.

Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 6,335,278
App. No.
09/455,909
Filed
1999-12-07
Granted
2002-01-01
Kind
B1