Granted Patent
Utility
US 6,355,548 · App. 09/722,465
Method for manufacturing a gate structure incorporated therein a high K dielectric
Inventor:
Dae-Gyu Park
Patented Case
View Patent ↗
Granted: Mar 12, 2002
Filed: Nov 28, 2000
Inventor
Dae-Gyu Park
Assignee (at issue)
Hyundai Electronics Industries Co. Ltd.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.