Granted Patent
Utility
US 6,362,051 · App. 09/648,361
Method of forming ONO flash memory devices using low energy nitrogen implantation
Inventors:
Jean Y. Yang, Yider Wu, Hidehiko Shiraiwa, Mark Ramsbey
Patented Case
View Patent ↗
Granted: Mar 26, 2002
Filed: Aug 25, 2000
Inventors
Jean Y. Yang
Yider Wu
Hidehiko Shiraiwa
Mark Ramsbey
Assignees (at issue)
Advanced Micro Devices, Inc.
Fujitsu Limited
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.