IP Library › Granted Patent US 6,365,425
Granted Patent Utility
US 6,365,425 · App. 09/604,251

Method of manufacturing semiconductor device

Inventors: Masami Ikota, Aritoshi Sugimoto, Hisato Nakamura
Patented Case View Patent ↗
Granted: Apr 2, 2002 Filed: Jun 27, 2000
Inventors
Masami Ikota
Aritoshi Sugimoto
Hisato Nakamura
Assignees (at issue)
HITACHI, LTD.
Hitachi Electronics Engineering Co., Ltd.

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Quick Facts
Patent No.
US 6,365,425
App. No.
09/604,251
Filed
2000-06-27
Granted
2002-04-02
Kind
B1