IP Library › Granted Patent US 6,372,588
Granted Patent Utility
US 6,372,588 · App. 08/837,523

Method of making an IGFET using solid phase diffusion to dope the gate, source and drain

Inventors: Derick J. Wristers, Robert Dawson, H. Jim Fulford, Mark I. Gardner, Frederick N. Hause, Mark W. Michael, Bradley T. Moore
Patented Case View Patent ↗
Granted: Apr 16, 2002 Filed: Apr 21, 1997
Inventors
Derick J. Wristers
Robert Dawson
H. Jim Fulford
Mark I. Gardner
Frederick N. Hause
Mark W. Michael
Bradley T. Moore
Assignee (at issue)
Advanced Micro Devices, Inc.

This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.

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Quick Facts
Patent No.
US 6,372,588
App. No.
08/837,523
Filed
1997-04-21
Granted
2002-04-16
Kind
B2