Granted Patent
Utility
US 6,372,609 · App. 09/555,687
Method of Fabricating SOI wafer by hydrogen ION delamination method and SOI wafer fabricated by the method
Inventors:
Hiroji Aga, Naoto Tate, Kiyoshi Mitani
Patented Case
View Patent ↗
Granted: Apr 16, 2002
Filed: Jun 2, 2000
Inventors
Hiroji Aga
Naoto Tate
Kiyoshi Mitani
Assignees (at issue)
SHIN-ETSU HANDOTAI CO., LTD.
SOITEC SA
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.