Granted Patent
Utility
US 6,372,651 · App. 09/286,464
Method for trimming a photoresist pattern line for memory gate etching
Inventors:
Wenge Yang, Lewis Shen
Patented Case
View Patent ↗
Granted: Apr 16, 2002
Filed: Apr 6, 1999
Inventors
Wenge Yang
Lewis Shen
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.