IP Library › Granted Patent US 6,380,091
Granted Patent Utility
US 6,380,091 · App. 09/238,050

Dual damascene arrangement for metal interconnection with oxide dielectric layer and low K dielectric constant layer

Inventors: Fei Wang, Jerry Cheng, Darrell M. Erb
Patented Case View Patent ↗
Granted: Apr 30, 2002 Filed: Jan 27, 1999
Inventors
Fei Wang
Jerry Cheng
Darrell M. Erb
Assignee (at issue)
Advanced Micro Devices, Inc.

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Quick Facts
Patent No.
US 6,380,091
App. No.
09/238,050
Filed
1999-01-27
Granted
2002-04-30
Kind
B1