Granted Patent
Utility
US 6,399,453 · App. 09/891,381
Process of manufacturing semiconductor integrated circuit device having an amorphous silicon gate
Inventors:
Ryo Nagai, Norikatsu Takaura, Hisao Asakura
Patented Case
View Patent ↗
Granted: Jun 4, 2002
Filed: Jun 27, 2001
Inventors
Ryo Nagai
Norikatsu Takaura
Hisao Asakura
Assignee (at issue)
HITACHI, LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.