Granted Patent
Utility
US 6,420,279 · App. 09/894,941
Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate
Inventors:
Yoshi Ono, Wei-Wei Zhuang, Rajendra Solanki
Patented Case
View Patent ↗
Granted: Jul 16, 2002
Filed: Jun 28, 2001
Inventors
Yoshi Ono
Wei-Wei Zhuang
Rajendra Solanki
Assignee (at issue)
Sharp Laboratories of America, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.