Granted Patent
Utility
US 6,479,409 · App. 09/790,568
Fabrication of a semiconductor device with an interlayer insulating film formed from a plasma devoid of an oxidizing agent
Inventors:
Yoshimi Shioya, Kouichi Ohira, Kazuo Maeda, Tomomi Suzuki, Hiroshi Ikakura, Youichi Yamamoto, Yuichiro Kotake, Shoji Ohgawara, Makoto Kurotobi
Patented Case
View Patent ↗
Granted: Nov 12, 2002
Filed: Feb 23, 2001
Inventors
Yoshimi Shioya
Kouichi Ohira
Kazuo Maeda
Tomomi Suzuki
Hiroshi Ikakura
Youichi Yamamoto
Yuichiro Kotake
Shoji Ohgawara
Makoto Kurotobi
Assignees (at issue)
Canon Sales Co., Inc.
Semiconductor Process Laboratory Co., Ltd.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.