Granted Patent
Utility
US 6,507,058 · App. 09/690,876
Low threshold compact MOS device with channel region formed by outdiffusion of two regions and method of making same
Inventors:
Jefferson W. Hall, Mohamed Imam, Zia Hossain, Mohammed Tanvir Quddus, Joe Fulton
Patented Case
View Patent ↗
Granted: Jan 14, 2003
Filed: Oct 17, 2000
Inventors
Jefferson W. Hall
Mohamed Imam
Zia Hossain
Mohammed Tanvir Quddus
Joe Fulton
Assignee (at issue)
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.