IP Library › Granted Patent US 6,518,154
Granted Patent Utility
US 6,518,154 · App. 09/813,310

Method of forming semiconductor devices with differently composed metal-based gate electrodes

Inventors: Matthew S. Buynoski, Qi Xiang, Paul R. Besser
Patented Case View Patent ↗
Granted: Feb 11, 2003 Filed: Mar 21, 2001
Inventors
Matthew S. Buynoski
Qi Xiang
Paul R. Besser
Assignee (at issue)
Advanced Micro Devices, Inc.

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Quick Facts
Patent No.
US 6,518,154
App. No.
09/813,310
Filed
2001-03-21
Granted
2003-02-11
Kind
B1