Granted Patent
Utility
US 6,555,839 · App. 09/859,138
Buried channel strained silicon FET using a supply layer created through ion implantation
Inventor:
Eugene A. Fitzgerald
Patented Case
View Patent ↗
Granted: Apr 29, 2003
Filed: May 16, 2001
Inventor
Eugene A. Fitzgerald
Assignee (at issue)
AMBERWAVE SYSTEMS CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.