IP Library Granted Patent US 6,559,011
Granted Patent Utility
US 6,559,011 · App. 09/692,012

Dual level gate process for hot carrier control in double diffused MOS transistors

Inventor: Muhammed Ayman Shibib
Patented Case View Patent ↗
Granted: May 6, 2003 Filed: Oct 19, 2000
Inventor
Muhammed Ayman Shibib

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Quick Facts
Patent No.
US 6,559,011
App. No.
09/692,012
Filed
2000-10-19
Granted
2003-05-06
Kind
B1