Granted Patent
Utility
US 6,583,015 · App. 09/923,207
Gate technology for strained surface channel and strained buried channel MOSFET devices
Inventors:
Eugene A. Fitzgerald, Richard Hammond, Matthew T. Currie
Patented Case
View Patent ↗
Granted: Jun 24, 2003
Filed: Aug 6, 2001
Inventors
Eugene A. Fitzgerald
Richard Hammond
Matthew T. Currie
Assignee (at issue)
AMBERWAVE SYSTEMS CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.