Granted Patent
Utility
US 6,600,206 · App. 10/123,007
High voltage semiconductor device having high breakdown voltage isolation region
Inventors:
Chang-ki Jeon, Sung-Iyong Kim, Jong-jib Kim
Patented Case
View Patent ↗
Granted: Jul 29, 2003
Filed: Apr 15, 2002
Inventors
Chang-ki Jeon
Sung-Iyong Kim
Jong-jib Kim
Assignee (at issue)
Fairchild Korea Semiconductor Ltd.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.