IP Library Granted Patent US 6,613,834
Granted Patent Utility
US 6,613,834 · App. 09/797,865

Low dielectric constant film material, film and semiconductor device using such material

Inventors: Yoshihiro Nakata, Shun-ichi Fukuyama, Katsumi Suzuki, Ei Yano, Tamotsu Owada, Iwao Sugiura
Patented Case View Patent ↗
Granted: Sep 2, 2003 Filed: Mar 5, 2001
Inventors
Yoshihiro Nakata
Shun-ichi Fukuyama
Katsumi Suzuki
Ei Yano
Tamotsu Owada
Iwao Sugiura
Assignee (at issue)
Fujitsu Limited

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Quick Facts
Patent No.
US 6,613,834
App. No.
09/797,865
Filed
2001-03-05
Granted
2003-09-02
Kind
B2