IP Library › Granted Patent US 6,620,724
Granted Patent Utility
US 6,620,724 · App. 10/142,518

Low resistivity deep trench fill for DRAM and EDRAM applications

Inventors: Uwe Schroeder, Helmut Tews, Irene McStay, Manfred Hauf, Matthias Goldbach, Bernhard Sell, Harald Seidl, Dirk Schumann, Rajarao Jammy, Joseph F. Shepard, Jr., Jean-Marc Rousseau
Patented Case View Patent ↗
Granted: Sep 16, 2003 Filed: May 9, 2002
Inventors
Uwe Schroeder
Helmut Tews
Irene McStay
Manfred Hauf
Matthias Goldbach
Bernhard Sell
Harald Seidl
Dirk Schumann
Rajarao Jammy
Joseph F. Shepard, Jr.
Jean-Marc Rousseau
Assignees (at issue)
Infineon Technologies AG
International Business Machines Corporation

This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.

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Quick Facts
Patent No.
US 6,620,724
App. No.
10/142,518
Filed
2002-05-09
Granted
2003-09-16
Kind
B1