IP Library › Granted Patent US 6,624,471
Granted Patent Utility
US 6,624,471 · App. 09/960,254

Lateral DMOS transistor with first and second drain electrodes in respective contact with high-and low-concentration portions of a drain region

Inventors: Nicola Zatelli, Massimo Atti, Elisabetta Palumbo, Cosimo Torelli
Patented Case View Patent ↗
Granted: Sep 23, 2003 Filed: Sep 20, 2001
Inventors
Nicola Zatelli
Massimo Atti
Elisabetta Palumbo
Cosimo Torelli
Assignee (at issue)
STMICROELECTRONICS S.r.l.

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Quick Facts
Patent No.
US 6,624,471
App. No.
09/960,254
Filed
2001-09-20
Granted
2003-09-23
Kind
B2