Granted Patent
Utility
US 6,627,502 · App. 10/279,898
Method for forming high concentration shallow junctions for short channel MOSFETs
Inventor:
Shiu-Ying Cho
Patented Case
View Patent ↗
Granted: Sep 30, 2003
Filed: Oct 24, 2002
Inventor
Shiu-Ying Cho
Assignee (at issue)
Taiwan Semiconductor Manufacturing Company, Ltd.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.