Granted Patent
Utility
US 6,627,973 · App. 10/244,129
Void-free interlayer dielectric (ILD0) for 0.18-micron flash memory semiconductor device
Inventors:
Minh Van Ngo, Robert A. Huertas, Lu You, King Wai Kelwin Ko, Pei-Yuan Gao
Patented Case
View Patent ↗
Granted: Sep 30, 2003
Filed: Sep 13, 2002
Inventors
Minh Van Ngo
Robert A. Huertas
Lu You
King Wai Kelwin Ko
Pei-Yuan Gao
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.