Granted Patent
Utility
US 6,636,441 · App. 09/987,611
Semiconductor memory device including non-volatile memory cell array having MOS structure in well region formed on semiconductor substrate
Inventor:
Tadayuki Taura
Patented Case
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Granted: Oct 21, 2003
Filed: Nov 15, 2001
Inventor
Tadayuki Taura
Assignee (at issue)
Kabushiki Kaisha Toshiba
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.