IP Library › Granted Patent US 6,639,255
Granted Patent Utility
US 6,639,255 · App. 09/733,593

GaN-based HFET having a surface-leakage reducing cap layer

Inventors: Kaoru Inoue, Katsunori Nishii, Hiroyuki Masato
Patented Case View Patent ↗
Granted: Oct 28, 2003 Filed: Dec 8, 2000
Inventors
Kaoru Inoue
Katsunori Nishii
Hiroyuki Masato
Assignee (at issue)
SUMITOMO ELECTRIC INDUSTRIES, LTD.

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Quick Facts
Patent No.
US 6,639,255
App. No.
09/733,593
Filed
2000-12-08
Granted
2003-10-28
Kind
B2