Granted Patent
Utility
US 6,642,066 · App. 10/145,942
Integrated process for depositing layer of high-K dielectric with in-situ control of K value and thickness of high-K dielectric layer
Inventors:
Arvind Halliyal, Farzad Arsania
Patented Case
View Patent ↗
Granted: Nov 4, 2003
Filed: May 15, 2002
Inventors
Arvind Halliyal
Farzad Arsania
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.